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| to-220-3l 1.base 2.collector 3.emitter to-220-3l plastic-encapsulate transistors 2SB857 transistor (pnp) features z low frequency power amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -70 v collector-emitter breakdown voltage v (br)ceo * i c =-50ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 a h fe(1) * v ce =-4v, i c =-1a 60 320 dc current gain h fe(2) * v ce =-4v, i c =-0.1a 35 collector-emitter saturation voltage v ce(sat) * i c =-2a,i b =-200ma -1 v base-emitter voltage v be * v ce =-4v, i c =-1a -1 v transition frequency f t * v ce =-4v,i c =-500ma 15 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. classification of h fe(1) rank b c d range 60-120 100-200 160-320 symbol parameter value unit v cbo collector-base voltage -70 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -4 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 62.5 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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